IPS60R3K4CEAKMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

No

Lead Free :

Contains Lead

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

6 mJ

Drain-source On Resistance-Max :

3.4Ohm

Terminal Finish :

Tin (Sn)

Transistor Application :

SWITCHING

Factory Lead Time :

18 Weeks

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSIP-T3

JEDEC-95 Code :

TO-251

Drain to Source Voltage (Vdss) :

600V

Pbfree Code :

yes

Terminal Position :

Single

Reach Compliance Code :

not_compliant

Min Operating Temperature :

-40°C

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Terminal Form :

THROUGH-HOLE

Polarity/Channel Type :

N-Channel

ECCN Code :

EAR99

Max Dual Supply Voltage :

600V

Max Operating Temperature :

150°C

RoHS Status :

ROHS3 Compliant

Published :

2013

Halogen Free :

Halogen Free

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Pulsed Drain Current-Max (IDM) :

3.9A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Technology :

METAL-OXIDE SEMICONDUCTOR