IPI80N06S4L07AKSA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

80A Tc

RoHS Status :

ROHS3 Compliant

Height :

9.25mm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation :

79W

Number of Terminations :

3

Vgs (Max) :

±16V

FET Type :

N-Channel

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

Factory Lead Time :

16 Weeks

Rds On (Max) @ Id, Vgs :

6.7m Ω @ 80A, 10V

Element Configuration :

Single

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

80A

Turn On Delay Time :

10 ns

Gate Charge (Qg) (Max) @ Vgs :

72nC @ 10V

Turn-Off Delay Time :

50 ns

Series :

OptiMOS™

Drain-source On Resistance-Max :

0.0064Ohm

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

5680pF @ 25V

Pbfree Code :

yes

Number of Pins :

3

Max Dual Supply Voltage :

60V

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Published :

2009

Length :

10mm

Vgs(th) (Max) @ Id :

2.2V @ 40μA

Operating Temperature :

-55°C~175°C TJ

Terminal Finish :

Tin (Sn)

Gate to Source Voltage (Vgs) :

16V

Width :

4.4mm

Reach Compliance Code :

not_compliant

Power Dissipation-Max :

79W Tc

Halogen Free :

Halogen Free