IPI80N04S2-04

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

56 ns

Number of Pins :

3

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Rise Time :

45ns

Operating Temperature :

-55°C~175°C TJ

Power Dissipation :

300W

Drain to Source Breakdown Voltage :

40V

ECCN Code :

EAR99

Fall Time (Typ) :

32 ns

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

Width :

4.4mm

Additional Feature :

AVALANCHE RATED

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Avalanche Energy Rating (Eas) :

810 mJ

Published :

2006

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

300W Tc

Halogen Free :

Halogen Free

FET Type :

N-Channel

Series :

OptiMOS™

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Element Configuration :

Single

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

5300pF @ 25V

Length :

10mm

Continuous Drain Current (ID) :

80A

Rds On (Max) @ Id, Vgs :

3.7m Ω @ 80A, 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Turn On Delay Time :

26 ns

Max Dual Supply Voltage :

40V

Transistor Element Material :

SILICON

Surface Mount :

No

Height :

9.25mm