IPI80N04S3-06

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

320A

Series :

OptiMOS™

Published :

2007

Power Dissipation-Max :

100W Tc

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Rds On (Max) @ Id, Vgs :

5.7m Ω @ 80A, 10V

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.0057Ohm

Drain to Source Voltage (Vdss) :

40V

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4V @ 52μA

Surface Mount :

No

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Avalanche Energy Rating (Eas) :

125 mJ

Input Capacitance (Ciss) (Max) @ Vds :

3250pF @ 25V

Operating Temperature :

-55°C~175°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

Number of Terminations :

3

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

47nC @ 10V

Reach Compliance Code :

Compliant

ECCN Code :

EAR99

Vgs (Max) :

±20V

DS Breakdown Voltage-Min :

40V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PSIP-T3

HTS Code :

8541.29.00.95

RoHS Status :

RoHS Compliant

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

80A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Additional Feature :

ULTRA LOW RESISTANCE

Packaging :

Tube