IPI80N06S208AKSA2
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- Mfr.Part #
- IPI80N06S208AKSA2
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 80A TO262-3
- Stock
- 38,021
- In Stock ：
- 38,021
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 15ns
- Radiation Hardening :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 2860pF @ 25V
- Vgs(th) (Max) @ Id :
- 4V @ 150μA
- Published :
- 2006
- Factory Lead Time :
- 10 Weeks
- Lead Free :
- Lead Free
- Drain-source On Resistance-Max :
- 0.008Ohm
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs (Max) :
- ±20V
- Turn-Off Delay Time :
- 32 ns
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Fall Time (Typ) :
- 14 ns
- Terminal Position :
- Single
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Power Dissipation-Max :
- 215W Tc
- Avalanche Energy Rating (Eas) :
- 450 mJ
- Rds On (Max) @ Id, Vgs :
- 8m Ω @ 58A, 10V
- Operating Temperature :
- -55°C~175°C TJ
- Mount :
- Through Hole
- JESD-609 Code :
- e3
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Tin (Sn)
- Max Dual Supply Voltage :
- 55V
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- FET Type :
- N-Channel
- Series :
- OptiMOS™
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Turn On Delay Time :
- 14 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 96nC @ 10V
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Continuous Drain Current (ID) :
- 80A
- Packaging :
- Tube
- Datasheets
- IPI80N06S208AKSA2
N-Channel Tube 8m Ω @ 58A, 10V ±20V 2860pF @ 25V 96nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
IPI80N06S208AKSA2 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 450 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2860pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 80A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 32 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In addition to 55V, it supports dual voltages up to the maximum.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IPI80N06S208AKSA2 Features
the avalanche energy rating (Eas) is 450 mJ
a continuous drain current (ID) of 80A
the turn-off delay time is 32 ns
IPI80N06S208AKSA2 Applications
There are a lot of Infineon Technologies
IPI80N06S208AKSA2 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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