IPI80N04S403AKSA1
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- Mfr.Part #
- IPI80N04S403AKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 80A TO262-3
- Stock
- 24,959
- In Stock ：
- 24,959
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Published :
- 2010
- Transistor Element Material :
- SILICON
- Series :
- OptiMOS™
- Operating Temperature :
- -55°C~175°C TJ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Lead Free :
- Contains Lead
- Vgs (Max) :
- ±20V
- Avalanche Energy Rating (Eas) :
- 200 mJ
- Gate to Source Voltage (Vgs) :
- 20V
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Power Dissipation-Max :
- 94W Tc
- Terminal Finish :
- Tin (Sn)
- Fall Time (Typ) :
- 16 ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Packaging :
- Tube
- Continuous Drain Current (ID) :
- 80A
- Terminal Position :
- Single
- Factory Lead Time :
- 16 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 66nC @ 10V
- Rise Time :
- 12ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Dual Supply Voltage :
- 40V
- Halogen Free :
- Halogen Free
- Reach Compliance Code :
- not_compliant
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Type :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 3.7m Ω @ 80A, 10V
- FET Type :
- N-Channel
- Mount :
- Through Hole
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 5260pF @ 25V
- Vgs(th) (Max) @ Id :
- 4V @ 53μA
- Number of Terminations :
- 3
- Turn On Delay Time :
- 14 ns
- Datasheets
- IPI80N04S403AKSA1
N-Channel Tube 3.7m Ω @ 80A, 10V ±20V 5260pF @ 25V 66nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
IPI80N04S403AKSA1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 200 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 5260pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 14 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The maximum dual supply voltage can be supported by 40V.In addition to reducing power consumption, this device uses drive voltage (10V).
IPI80N04S403AKSA1 Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 80A
IPI80N04S403AKSA1 Applications
There are a lot of Infineon Technologies
IPI80N04S403AKSA1 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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