IPD90N06S4L-05

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

80 ns

Input Capacitance (Ciss) (Max) @ Vds :

8180pF @ 25V

Rise Time :

4ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Power Dissipation-Max :

107W Tc

Vgs(th) (Max) @ Id :

2.2V @ 60μA

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

2

Case Connection :

DRAIN

Series :

Automotive, AEC-Q101, OptiMOS™

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Max Dual Supply Voltage :

60V

Drain-source On Resistance-Max :

0.0046Ohm

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

13 ns

Factory Lead Time :

16 Weeks

Published :

2009

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Pins :

3

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn On Delay Time :

14 ns

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Rds On (Max) @ Id, Vgs :

4.6m Ω @ 90A, 10V

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Gate to Source Voltage (Vgs) :

16V

Terminal Form :

Gull wing

Weight :

3.949996g

Reach Compliance Code :

not_compliant

Terminal Finish :

Tin (Sn)

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

90A

Number of Channels :

1

Pbfree Code :

yes

JESD-30 Code :

R-PSSO-G2

Vgs (Max) :

±16V

Terminal Position :

Single