IPD90N06S404ATMA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 90µA

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Pbfree Code :

yes

Turn On Delay Time :

30 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

Power Dissipation :

150W

Drain-source On Resistance-Max :

0.0038Ohm

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Power Dissipation-Max :

150W Tc

Series :

Automotive, AEC-Q101, OptiMOS™

Weight :

3.949996g

Number of Terminations :

2

Terminal Finish :

Tin (Sn)

Continuous Drain Current (ID) :

90A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

360A

Fall Time (Typ) :

5 ns

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

128nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

90A Tc

FET Type :

N-Channel

Vgs (Max) :

±20V

Rise Time :

70ns

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Published :

2005

Max Dual Supply Voltage :

60V

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

10400pF @ 25V

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

3.8m Ω @ 90A, 10V

JESD-30 Code :

R-PSSO-G2

Turn-Off Delay Time :

40 ns

Factory Lead Time :

16 Weeks

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single