IPD90N04S402ATMA1
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- Mfr.Part #
- IPD90N04S402ATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 90A TO252-3
- Stock
- 32,277
- In Stock ：
- 32,277
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Factory Lead Time :
- 16 Weeks
- Turn-Off Delay Time :
- 27 ns
- Turn On Delay Time :
- 23 ns
- JESD-30 Code :
- R-PSSO-G2
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Position :
- Single
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Vgs (Max) :
- ±20V
- Terminal Finish :
- Tin (Sn)
- Vgs(th) (Max) @ Id :
- 4V @ 95µA
- Number of Terminations :
- 2
- Gate to Source Voltage (Vgs) :
- 20V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Avalanche Energy Rating (Eas) :
- 475 mJ
- Operating Temperature :
- -55°C~175°C TJ
- ECCN Code :
- EAR99
- Continuous Drain Current (ID) :
- 90A
- Case Connection :
- DRAIN
- Power Dissipation-Max :
- 150W Tc
- Reach Compliance Code :
- not_compliant
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Contains Lead
- Drain-source On Resistance-Max :
- 0.0024Ohm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Series :
- Automotive, AEC-Q101, OptiMOS™
- Rds On (Max) @ Id, Vgs :
- 2.4m Ω @ 90A, 10V
- FET Type :
- N-Channel
- Terminal Form :
- Gull wing
- Halogen Free :
- Halogen Free
- Rise Time :
- 10ns
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 90A Tc
- Max Dual Supply Voltage :
- 40V
- Mount :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 118nC @ 10V
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2010
- Input Capacitance (Ciss) (Max) @ Vds :
- 9430pF @ 25V
- Datasheets
- IPD90N04S402ATMA1
N-Channel Tape & Reel (TR) 2.4m Ω @ 90A, 10V ±20V 9430pF @ 25V 118nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
IPD90N04S402ATMA1 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 475 mJ.A device's maximal input capacitance is 9430pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 90A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 27 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 23 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.By using 40V, it can supply the maximum voltage from two sources.This device reduces its overall power consumption by using drive voltage (10V).
IPD90N04S402ATMA1 Features
the avalanche energy rating (Eas) is 475 mJ
a continuous drain current (ID) of 90A
the turn-off delay time is 27 ns
IPD90N04S402ATMA1 Applications
There are a lot of Infineon Technologies
IPD90N04S402ATMA1 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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