IPD90N06S407ATMA2

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Mfr.Part #
IPD90N06S407ATMA2
Manufacturer
Infineon Technologies
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 60V 90A TO252-31
Stock
28,016
In Stock :
28,016

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Packaging :
Tape and Reel (TR)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Form :
Gull wing
Number of Terminations :
2
Pbfree Code :
yes
Terminal Finish :
Tin (Sn)
Continuous Drain Current (ID) :
90A
Rise Time :
3ns
JESD-609 Code :
e3
Weight :
3.949996g
Gate to Source Voltage (Vgs) :
20V
Vgs (Max) :
±20V
Case Connection :
DRAIN
JESD-30 Code :
R-PSSO-G2
Number of Elements :
1
Factory Lead Time :
16 Weeks
Turn-Off Delay Time :
23 ns
Turn On Delay Time :
15 ns
Power Dissipation-Max :
79W Tc
Number of Channels :
1
Terminal Position :
Single
Gate Charge (Qg) (Max) @ Vgs :
56nC @ 10V
FET Type :
N-Channel
Vgs(th) (Max) @ Id :
4V @ 40μA
Operating Temperature :
-55°C~175°C TJ
Avalanche Energy Rating (Eas) :
67 mJ
Reach Compliance Code :
not_compliant
Rds On (Max) @ Id, Vgs :
6.9m Ω @ 90A, 10V
Transistor Element Material :
SILICON
ECCN Code :
EAR99
Series :
Automotive, AEC-Q101, OptiMOS™
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
RoHS Status :
ROHS3 Compliant
Drain-source On Resistance-Max :
0.0069Ohm
Current - Continuous Drain (Id) @ 25°C :
90A Tc
Mounting Type :
Surface Mount
Input Capacitance :
4.5nF
Fall Time (Typ) :
5 ns
Operating Mode :
ENHANCEMENT MODE
Published :
2009
Drive Voltage (Max Rds On,Min Rds On) :
10V
Configuration :
SINGLE WITH BUILT-IN DIODE
Number of Pins :
3
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Max Dual Supply Voltage :
60V
Mount :
Surface Mount
Datasheets
IPD90N06S407ATMA2
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IPD90N06S407ATMA2 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Number of Channels:1, Operating Temperature:-55°C~175°C TJ, Mounting Type:Surface Mount, Number of Pins:3, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, IPD90N06S407ATMA2 pinout, IPD90N06S407ATMA2 datasheet PDF, IPD90N06S407ATMA2 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPD90N06S407ATMA2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IPD90N06S407ATMA2


N-Channel Tape & Reel (TR) 6.9m Ω @ 90A, 10V ±20V 56nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

IPD90N06S407ATMA2 Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 67 mJ (Eas).The drain current is the maximum continuous current the device can conduct, and this device has 90A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 23 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 15 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In addition to 60V, it supports dual voltages up to the maximum.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IPD90N06S407ATMA2 Features


the avalanche energy rating (Eas) is 67 mJ
a continuous drain current (ID) of 90A
the turn-off delay time is 23 ns


IPD90N06S407ATMA2 Applications


There are a lot of Infineon Technologies
IPD90N06S407ATMA2 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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