IPD80R900P7ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

not_compliant

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

14A

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Vgs(th) (Max) @ Id :

3.5V @ 110μA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

800V

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Case Connection :

DRAIN

Terminal Position :

Single

Transistor Element Material :

SILICON

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn) - with Nickel (Ni) barrier

Series :

CoolMOS™ P7

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Published :

2014

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 500V

Rds On (Max) @ Id, Vgs :

900m Ω @ 2.2A, 10V

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

13 mJ

Factory Lead Time :

18 Weeks

DS Breakdown Voltage-Min :

800V

Drain-source On Resistance-Max :

0.9Ohm

JEDEC-95 Code :

TO-252AA

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

2

Power Dissipation-Max :

45W Tc