IPD80R280P7ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

280m Ω @ 7.2A, 10V

Series :

CoolMOS™

Terminal Form :

Gull wing

Vgs (Max) :

±20V

Number of Terminations :

2

Vgs(th) (Max) @ Id :

3.5V @ 360μA

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Published :

2013

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

18 Weeks

JESD-30 Code :

R-PSSO-G2

FET Feature :

Super Junction

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

800V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Surface Mount :

yes

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

43 mJ

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Terminal Position :

Single

Drain-source On Resistance-Max :

0.28Ohm

Pbfree Code :

yes

DS Breakdown Voltage-Min :

800V

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 500V

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

45A

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Power Dissipation-Max :

101W Tc

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON