IPD80R1K4CEBTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Number of Pins :

3

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rise Time :

15ns

Current - Continuous Drain (Id) @ 25°C :

3.9A Tc

Turn-Off Delay Time :

72 ns

Continuous Drain Current (ID) :

3.9A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Turn On Delay Time :

25 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

63W

Number of Elements :

1

JESD-30 Code :

R-PSSO-G2

Vgs(th) (Max) @ Id :

3.9V @ 240μA

Mounting Type :

Surface Mount

Reach Compliance Code :

not_compliant

Power Dissipation-Max :

63W Tc

Terminal Form :

Gull wing

FET Type :

N-Channel

Vgs (Max) :

±20V

Max Dual Supply Voltage :

800V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 2.3A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

570pF @ 100V

RoHS Status :

ROHS3 Compliant

Series :

CoolMOS™

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Weight :

3.949996g

Fall Time (Typ) :

12 ns

Pbfree Code :

yes

Published :

2008

Element Configuration :

Single