IPD80R4K5P7

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Reach Compliance Code :

not_compliant

Vgs(th) (Max) @ Id :

3.5V @ 200µA

Avalanche Energy Rating (Eas) :

1 mJ

Input Capacitance (Ciss) (Max) @ Vds :

80pF @ 500V

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

800V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Published :

2013

FET Feature :

Super Junction

Terminal Position :

Single

JEDEC-95 Code :

TO-252AA

Rds On (Max) @ Id, Vgs :

4.5 Ω @ 400mA, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

CoolMOS™

Gate Charge (Qg) (Max) @ Vgs :

4nC @ 10V

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

13W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSSO-G2

Transistor Application :

SWITCHING

Number of Terminations :

2

DS Breakdown Voltage-Min :

800V

Pbfree Code :

yes

Terminal Finish :

Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

1.5A Tc

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

1.5A

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

2.6A

Factory Lead Time :

18 Weeks