IPD80R450P7ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

11A

Pulsed Drain Current-Max (IDM) :

29A

DS Breakdown Voltage-Min :

800V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Pbfree Code :

yes

Series :

CoolMOS™

Factory Lead Time :

18 Weeks

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Published :

2013

FET Type :

N-Channel

FET Feature :

Super Junction

JEDEC-95 Code :

TO-252AA

Drain-source On Resistance-Max :

0.45Ohm

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Case Connection :

DRAIN

Terminal Finish :

Tin (Sn)

Reach Compliance Code :

not_compliant

Power Dissipation-Max :

73W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

800V

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

3.5V @ 220µA

Rds On (Max) @ Id, Vgs :

450m Ω @ 4.5A, 10V

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JESD-30 Code :

R-PSSO-G2

Number of Terminations :

2

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

29 mJ

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

770pF @ 500V