IPD80R3K3P7ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

2

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

120pF @ 500V

Avalanche Energy Rating (Eas) :

2 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Vgs(th) (Max) @ Id :

3.5V @ 30μA

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Terminal Form :

Gull wing

Published :

2014

Factory Lead Time :

18 Weeks

Terminal Position :

Single

Power Dissipation-Max :

18W Tc

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Series :

CoolMOS™ P7

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

1.9A Tc

Surface Mount :

yes

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JEDEC-95 Code :

TO-252AA

Pulsed Drain Current-Max (IDM) :

3.8A

Gate Charge (Qg) (Max) @ Vgs :

5.8nC @ 10V

DS Breakdown Voltage-Min :

800V

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PSSO-G2

Drain to Source Voltage (Vdss) :

800V

Rds On (Max) @ Id, Vgs :

3.3 Ω @ 590mA, 10V

Case Connection :

DRAIN