IPD80R2K8CEATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

290pF @ 100V

Vgs (Max) :

±20V

Fall Time (Typ) :

18 ns

Rds On (Max) @ Id, Vgs :

2.8Ohm @ 1.1A, 10V

Drain to Source Voltage (Vdss) :

800V

Supplier Device Package :

PG-TO252-3

Element Configuration :

Single

Max Operating Temperature :

150°C

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Max Dual Supply Voltage :

800V

Power Dissipation-Max :

42W Tc

Current - Continuous Drain (Id) @ 25°C :

1.9A Tc

Mounting Type :

Surface Mount

Number of Channels :

1

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Turn On Delay Time :

25 ns

Drain to Source Resistance :

2.4Ohm

Rds On Max :

2.8 Ω

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Gate to Source Voltage (Vgs) :

30V

Operating Temperature :

-55°C~150°C TJ

Rise Time :

15ns

Input Capacitance :

290pF

Drive Voltage (Max Rds On,Min Rds On) :

10V

Weight :

3.949996g

Turn-Off Delay Time :

72 ns

Published :

2008

Vgs(th) (Max) @ Id :

3.9V @ 120μA

Mount :

Surface Mount

Continuous Drain Current (ID) :

1.9A

Factory Lead Time :

18 Weeks

Min Operating Temperature :

-55°C

FET Type :

N-Channel

Series :

CoolMOS™ CE