IPD80R2K7C3AATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

800V

Reference Standard :

AEC-Q101

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

2.7Ohm

Polarity/Channel Type :

N-Channel

JEDEC-95 Code :

TO-252

Operating Temperature (Min) :

-40°C

Drain Current-Max (Abs) (ID) :

2A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Factory Lead Time :

18 Weeks

Reach Compliance Code :

not_compliant

Surface Mount :

yes

Published :

2005

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

6A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

90 mJ

JESD-609 Code :

e3

Terminal Finish :

Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Terminal Position :

Single

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

Number of Terminations :

2