IPD75N04S406ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Reach Compliance Code :

not_compliant

FET Type :

N-Channel

Published :

2010

Rds On (Max) @ Id, Vgs :

5.9m Ω @ 75A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

2550pF @ 25V

ECCN Code :

EAR99

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

72 mJ

Power Dissipation-Max :

58W Tc

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

Automotive, AEC-Q101, OptiMOS™

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Mounting Type :

Surface Mount

Factory Lead Time :

16 Weeks

Surface Mount :

yes

Number of Terminations :

2

Drain-source On Resistance-Max :

0.0059Ohm

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

40V

Number of Elements :

1

Drain to Source Voltage (Vdss) :

40V

JESD-30 Code :

R-PSSO-G2

Terminal Position :

Single

Case Connection :

DRAIN

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

300A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

75A

Terminal Finish :

Tin (Sn)

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4V @ 26μA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED