IPD70R1K4CEAUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Published :

2013

Pbfree Code :

yes

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

10.5nC @ 10V

Number of Terminations :

2

Halogen Free :

Halogen Free

FET Type :

N-Channel

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Lead Free :

Contains Lead

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

5.4A Tc

FET Feature :

Super Junction

Continuous Drain Current (ID) :

5.4A

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-40°C~150°C TJ

Avalanche Energy Rating (Eas) :

26 mJ

Transistor Element Material :

SILICON

Factory Lead Time :

18 Weeks

Power Dissipation-Max :

53W Tc

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

225pF @ 100V

Max Dual Supply Voltage :

700V

JESD-30 Code :

R-PSSO-G2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 1A, 10V

Packaging :

Tape and Reel (TR)

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

3.5V @ 130μA

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

CoolMOS™

Pulsed Drain Current-Max (IDM) :

8.3A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount