IPD70P04P409ATMA1
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- Mfr.Part #
- IPD70P04P409ATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET P-CH 40V 73A TO252-3
- Stock
- 180,796
- In Stock ：
- 180,796
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Max Dual Supply Voltage :
- -40V
- Number of Terminations :
- 2
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Halogen Free :
- Halogen Free
- Reach Compliance Code :
- not_compliant
- Terminal Finish :
- Tin (Sn)
- Number of Elements :
- 1
- Rise Time :
- 12ns
- FET Type :
- P-Channel
- Power Dissipation-Max :
- 75W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±20V
- Operating Temperature :
- -55°C~175°C TJ
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Lead Free :
- Contains Lead
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn-Off Delay Time :
- 24 ns
- Drain to Source Voltage (Vdss) :
- 40V
- Gate Charge (Qg) (Max) @ Vgs :
- 70nC @ 10V
- Operating Mode :
- ENHANCEMENT MODE
- Case Connection :
- DRAIN
- Drain-source On Resistance-Max :
- 0.0089Ohm
- Number of Pins :
- 3
- Mount :
- Surface Mount
- Fall Time (Typ) :
- 31 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Series :
- Automotive, AEC-Q101, OptiMOS™
- Pulsed Drain Current-Max (IDM) :
- 292A
- Published :
- 2003
- Factory Lead Time :
- 26 Weeks
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 4V @ 120µA
- Rds On (Max) @ Id, Vgs :
- 8.9m Ω @ 70A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4810pF @ 25V
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JESD-30 Code :
- R-PSSO-G2
- Turn On Delay Time :
- 19 ns
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Current - Continuous Drain (Id) @ 25°C :
- 73A Tc
- Terminal Position :
- Single
- Packaging :
- Tape and Reel (TR)
- Avalanche Energy Rating (Eas) :
- 24 mJ
- JESD-609 Code :
- e3
- Continuous Drain Current (ID) :
- 73A
- Terminal Form :
- Gull wing
- Datasheets
- IPD70P04P409ATMA1
P-Channel Tape & Reel (TR) 8.9m Ω @ 70A, 10V ±20V 4810pF @ 25V 70nC @ 10V 40V TO-252-3, DPak (2 Leads + Tab), SC-63
IPD70P04P409ATMA1 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 24 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4810pF @ 25V.This device conducts a continuous drain current (ID) of 73A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 24 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 292A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 19 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.With -40V power, it supports a dual voltage supply of up to maximum.This transistor requires a drain-source voltage (Vdss) of 40V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IPD70P04P409ATMA1 Features
the avalanche energy rating (Eas) is 24 mJ
a continuous drain current (ID) of 73A
the turn-off delay time is 24 ns
based on its rated peak drain current 292A.
a 40V drain to source voltage (Vdss)
IPD70P04P409ATMA1 Applications
There are a lot of Infineon Technologies
IPD70P04P409ATMA1 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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