IPC100N04S5L1R5ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

115W Tc

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

40V

Terminal Form :

Flat

Terminal Position :

Dual

Series :

OptiMOS™

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Pulsed Drain Current-Max (IDM) :

400A

FET Type :

N-Channel

JESD-30 Code :

R-PDSO-F3

JESD-609 Code :

e3

Vgs (Max) :

±16V

Rds On (Max) @ Id, Vgs :

1.5m Ω @ 50A, 10V

Mounting Type :

Surface Mount

Published :

2016

Reach Compliance Code :

not_compliant

Terminal Finish :

Tin (Sn)

Number of Elements :

1

Avalanche Energy Rating (Eas) :

220 mJ

Input Capacitance (Ciss) (Max) @ Vds :

5340pF @ 25V

ECCN Code :

EAR99

Reference Standard :

AEC-Q101

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Drain to Source Voltage (Vdss) :

40V

Package / Case :

8-PowerTDFN

Vgs(th) (Max) @ Id :

2V @ 60μA

Surface Mount :

yes

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Factory Lead Time :

16 Weeks

Gate Charge (Qg) (Max) @ Vgs :

95nC @ 10V

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.0021Ohm

Drain Current-Max (Abs) (ID) :

100A

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)