IPC100N04S52R8ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

7V 10V

Series :

OptiMOS™

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

100A Tc

JESD-30 Code :

R-PDSO-F3

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Terminal Position :

Dual

Vgs (Max) :

±20V

ECCN Code :

EAR99

Factory Lead Time :

16 Weeks

DS Breakdown Voltage-Min :

40V

Drain to Source Voltage (Vdss) :

40V

Drain Current-Max (Abs) (ID) :

100A

JESD-609 Code :

e3

Power Dissipation-Max :

75W Tc

Avalanche Energy Rating (Eas) :

66 mJ

RoHS Status :

ROHS3 Compliant

Package / Case :

8-PowerTDFN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2016

Mounting Type :

Surface Mount

Reference Standard :

AEC-Q101

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

2.8m Ω @ 50A, 10V

Terminal Finish :

Tin (Sn)

Terminal Form :

Flat

Input Capacitance (Ciss) (Max) @ Vds :

2600pF @ 25V

Surface Mount :

yes

FET Type :

N-Channel

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Reach Compliance Code :

not_compliant

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

400A

Drain-source On Resistance-Max :

0.0034Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

3.4V @ 30μA

Number of Terminations :

3