IPC100N04S402ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2013

Terminal Position :

Dual

Avalanche Energy Rating (Eas) :

315 mJ

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

25 Weeks

Power Dissipation-Max :

150W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Lead Free :

Contains Lead

Current - Continuous Drain (Id) @ 25°C :

100A Tc

RoHS Status :

RoHS Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

105nC @ 10V

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Pbfree Code :

yes

JESD-30 Code :

R-PDSO-F3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

2.4m Ω @ 50A, 10V

Halogen Free :

Halogen Free

Number of Terminations :

3

Max Dual Supply Voltage :

40V

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 80μA

Pulsed Drain Current-Max (IDM) :

400A

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Surface Mount

Number of Pins :

8

Package / Case :

8-PowerVDFN

Terminal Form :

Flat

Continuous Drain Current (ID) :

100A

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.0024Ohm

Input Capacitance (Ciss) (Max) @ Vds :

8100pF @ 25V

Series :

Automotive, AEC-Q101, OptiMOS™

Vgs (Max) :

±20V

Mount :

Surface Mount