IPB80P03P405ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Lead Free :

Contains Lead

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Terminal Finish :

Tin (Sn)

Power Dissipation-Max :

137W Tc

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.0047Ohm

Drain to Source Voltage (Vdss) :

30V

Factory Lead Time :

14 Weeks

Reference Standard :

AEC-Q101

JESD-30 Code :

R-PSSO-G2

Turn On Delay Time :

35 ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate to Source Voltage (Vgs) :

20V

Reach Compliance Code :

not_compliant

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

4.7m Ω @ 80A, 10V

Rise Time :

10ns

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

4V @ 253μA

FET Type :

P-Channel

Terminal Form :

Gull wing

Number of Pins :

3

Series :

OptiMOS™

Vgs (Max) :

±20V

Number of Terminations :

2

Turn-Off Delay Time :

70 ns

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

10300pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Continuous Drain Current (ID) :

80A

Mounting Type :

Surface Mount

Halogen Free :

Halogen Free

ECCN Code :

EAR99

Max Dual Supply Voltage :

-30V

Transistor Element Material :

SILICON

Mount :

Surface Mount

Published :

2008

Avalanche Energy Rating (Eas) :

410 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

20 ns

RoHS Status :

ROHS3 Compliant