IPB80N06S4L05ATMA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

10mm

Operating Temperature :

-55°C~175°C TJ

Fall Time (Typ) :

13 ns

Series :

Automotive, AEC-Q101, OptiMOS™

Pbfree Code :

yes

Reach Compliance Code :

not_compliant

Vgs(th) (Max) @ Id :

2.2V @ 60μA

Max Dual Supply Voltage :

60V

Rds On (Max) @ Id, Vgs :

5.1m Ω @ 80A, 10V

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

60V

Gate to Source Voltage (Vgs) :

16V

Transistor Element Material :

SILICON

Weight :

1.946308g

Terminal Form :

Gull wing

Rise Time :

4ns

FET Type :

N-Channel

Number of Terminations :

2

Packaging :

Tape and Reel (TR)

Number of Channels :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Turn On Delay Time :

14 ns

Halogen Free :

Halogen Free

Number of Elements :

1

Published :

2009

Turn-Off Delay Time :

80 ns

Drain-source On Resistance-Max :

0.0048Ohm

Factory Lead Time :

16 Weeks

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Continuous Drain Current (ID) :

80A

Height :

4.4mm

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

107W Tc

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Width :

9.25mm

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

8180pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Power Dissipation :

107W

Vgs (Max) :

±16V

JESD-30 Code :

R-PSSO-G2