IPB80N06S405ATMA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

81nC @ 10V

Width :

9.25mm

Factory Lead Time :

16 Weeks

Number of Channels :

1

FET Type :

N-Channel

Halogen Free :

Halogen Free

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Drain-source On Resistance-Max :

0.0057Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reach Compliance Code :

not_compliant

Published :

2009

JESD-30 Code :

R-PSSO-G2

Length :

10mm

Packaging :

Tape and Reel (TR)

Height :

4.4mm

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

6500pF @ 25V

Max Dual Supply Voltage :

60V

Power Dissipation-Max :

107W Tc

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Turn On Delay Time :

20 ns

Fall Time (Typ) :

8 ns

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mount :

Surface Mount

Number of Terminations :

2

Number of Pins :

3

Turn-Off Delay Time :

35 ns

Power Dissipation :

107W

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

60V

Rds On (Max) @ Id, Vgs :

5.7m Ω @ 80A, 10V

Continuous Drain Current (ID) :

80A

Series :

Automotive, AEC-Q101, OptiMOS™

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Weight :

1.946308g

Rise Time :

5ns

Vgs(th) (Max) @ Id :

4V @ 60μA

Pbfree Code :

yes

Terminal Form :

Gull wing

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB