IPB80N06S208ATMA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

96nC @ 10V

Factory Lead Time :

10 Weeks

Series :

OptiMOS™

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

2860pF @ 25V

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pbfree Code :

yes

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Contains Lead

Mounting Type :

Surface Mount

Power Dissipation-Max :

215W Tc

JESD-30 Code :

R-PSSO-G2

Published :

2006

Continuous Drain Current (ID) :

80A

Rise Time :

15ns

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

Gull wing

Turn-Off Delay Time :

32 ns

FET Type :

N-Channel

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

7.7m Ω @ 58A, 10V

Drain-source On Resistance-Max :

0.0077Ohm

Number of Pins :

3

Halogen Free :

Halogen Free

Max Dual Supply Voltage :

55V

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Turn On Delay Time :

14 ns

Vgs(th) (Max) @ Id :

4V @ 150μA

Number of Terminations :

2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

14 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

450 mJ

Mount :

Surface Mount