IPB80N06S208ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

320A

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

80A

Input Capacitance (Ciss) (Max) @ Vds :

2860pF @ 25V

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

0.0077Ohm

Surface Mount :

yes

Gate Charge (Qg) (Max) @ Vgs :

96nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 150μA

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

450 mJ

Case Connection :

DRAIN

Number of Terminations :

2

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

55V

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Published :

2006

Rds On (Max) @ Id, Vgs :

7.7m Ω @ 58A, 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Position :

Single

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Series :

OptiMOS™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

215W Tc

DS Breakdown Voltage-Min :

55V

Vgs (Max) :

±20V

JESD-30 Code :

R-PSSO-G2