IPB80N04S404ATMA1
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- Mfr.Part #
- IPB80N04S404ATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 80A TO263-3-2
- Stock
- 32,291
- In Stock ：
- 32,291
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 80A
- Packaging :
- Tape and Reel (TR)
- Operating Mode :
- ENHANCEMENT MODE
- Halogen Free :
- Halogen Free
- Input Capacitance (Ciss) (Max) @ Vds :
- 3440pF @ 25V
- Power Dissipation-Max :
- 71W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 43nC @ 10V
- Transistor Element Material :
- SILICON
- FET Type :
- N-Channel
- Terminal Form :
- Gull wing
- Reach Compliance Code :
- not_compliant
- Series :
- OptiMOS™
- Turn-Off Delay Time :
- 9 ns
- Lead Free :
- Contains Lead
- JESD-30 Code :
- R-PSSO-G2
- ECCN Code :
- EAR99
- Terminal Position :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn On Delay Time :
- 10 ns
- Max Dual Supply Voltage :
- 40V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Factory Lead Time :
- 16 Weeks
- Terminal Finish :
- Tin (Sn)
- Number of Terminations :
- 2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Elements :
- 1
- Drain-source On Resistance-Max :
- 0.0042Ohm
- Rise Time :
- 12ns
- Published :
- 2010
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~175°C TJ
- Mounting Type :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 4V @ 35μA
- Vgs (Max) :
- ±20V
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Rds On (Max) @ Id, Vgs :
- 4.2m Ω @ 80A, 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Avalanche Energy Rating (Eas) :
- 100 mJ
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheets
- IPB80N04S404ATMA1
N-Channel Tape & Reel (TR) 4.2m Ω @ 80A, 10V ±20V 3440pF @ 25V 43nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB80N04S404ATMA1 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 100 mJ.A device's maximal input capacitance is 3440pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 80A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 9 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.By using 40V, it can supply the maximum voltage from two sources.This device reduces its overall power consumption by using drive voltage (10V).
IPB80N04S404ATMA1 Features
the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 80A
the turn-off delay time is 9 ns
IPB80N04S404ATMA1 Applications
There are a lot of Infineon Technologies
IPB80N04S404ATMA1 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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