IPB80N04S306ATMA1
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- Mfr.Part #
- IPB80N04S306ATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 80A TO263-3
- Stock
- 16,844
- In Stock ：
- 16,844
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 4V @ 52μA
- Series :
- OptiMOS™
- Halogen Free :
- Halogen Free
- Drain-source On Resistance-Max :
- 0.0054Ohm
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- RoHS Status :
- ROHS3 Compliant
- HTS Code :
- 8541.29.00.95
- Lead Free :
- Contains Lead
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Continuous Drain Current (ID) :
- 80A
- Mount :
- Surface Mount
- JESD-30 Code :
- R-PSSO-G2
- Operating Mode :
- ENHANCEMENT MODE
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Position :
- Single
- Factory Lead Time :
- 12 Weeks
- Additional Feature :
- ULTRA LOW RESISTANCE
- Rise Time :
- 10ns
- FET Type :
- N-Channel
- Max Dual Supply Voltage :
- 40V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Temperature :
- -55°C~175°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Turn On Delay Time :
- 15 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- JESD-609 Code :
- e3
- Case Connection :
- DRAIN
- Reach Compliance Code :
- not_compliant
- Turn-Off Delay Time :
- 20 ns
- Avalanche Energy Rating (Eas) :
- 125 mJ
- Transistor Element Material :
- SILICON
- Terminal Form :
- Gull wing
- Rds On (Max) @ Id, Vgs :
- 5.4m Ω @ 80A, 10V
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Input Capacitance (Ciss) (Max) @ Vds :
- 3250pF @ 25V
- Power Dissipation-Max :
- 100W Tc
- Terminal Finish :
- Tin (Sn)
- Gate Charge (Qg) (Max) @ Vgs :
- 47nC @ 10V
- Published :
- 2007
- Vgs (Max) :
- ±20V
- Number of Terminations :
- 2
- Datasheets
- IPB80N04S306ATMA1
N-Channel Tape & Reel (TR) 5.4m Ω @ 80A, 10V ±20V 3250pF @ 25V 47nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB80N04S306ATMA1 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 125 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 3250pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 80A.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 20 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 15 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.This device supports dual supply voltages maximally powered by 40V.Using drive voltage (10V) reduces this device's overall power consumption.
IPB80N04S306ATMA1 Features
the avalanche energy rating (Eas) is 125 mJ
a continuous drain current (ID) of 80A
the turn-off delay time is 20 ns
IPB80N04S306ATMA1 Applications
There are a lot of Infineon Technologies
IPB80N04S306ATMA1 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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