IPA80R650CEXKSA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

JEDEC-95 Code :

TO-220AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

8A Ta

FET Type :

N-Channel

Factory Lead Time :

18 Weeks

Continuous Drain Current (ID) :

8A

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

CoolMOS™

Mounting Type :

Through Hole

Operating Temperature :

-40°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 100V

Power Dissipation-Max :

33W Tc

Vgs (Max) :

±20V

Max Dual Supply Voltage :

800V

Package / Case :

TO-220-3 Full Pack

Case Connection :

Isolated

Halogen Free :

Halogen Free

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

24A

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Number of Terminations :

3

Drain-source On Resistance-Max :

0.65Ohm

Vgs(th) (Max) @ Id :

3.9V @ 470μA

Terminal Position :

Single

Transistor Application :

SWITCHING

Packaging :

Tube

Drain Current-Max (Abs) (ID) :

8A

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSFM-T3

Number of Elements :

1

Avalanche Energy Rating (Eas) :

340 mJ

Rds On (Max) @ Id, Vgs :

650m Ω @ 5.1A, 10V

Published :

2008

Surface Mount :

No