IPA80R1K0CEXKSA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

5.7A

Turn On Delay Time :

25 ns

Terminal Finish :

Tin (Sn)

Turn-Off Delay Time :

72 ns

Published :

1997

Pbfree Code :

yes

Terminal Position :

Single

Halogen Free :

Halogen Free

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tube

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

950m Ω @ 3.6A, 10V

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-40°C~150°C TJ

Vgs(th) (Max) @ Id :

3.9V @ 250μA

Series :

CoolMOS™ CE

JESD-609 Code :

e3

Number of Channels :

1

JESD-30 Code :

R-PSFM-T3

Operating Mode :

ENHANCEMENT MODE

Max Junction Temperature (Tj) :

150°C

Input Capacitance (Ciss) (Max) @ Vds :

785pF @ 100V

Mounting Type :

Through Hole

JEDEC-95 Code :

TO-220AB

FET Type :

N-Channel

Case Connection :

Isolated

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

5.7A Tc

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

Number of Terminations :

3

Mount :

Through Hole

Power Dissipation-Max :

32W Tc

Drain-source On Resistance-Max :

0.95Ohm

Avalanche Energy Rating (Eas) :

230 mJ

Package / Case :

TO-220-3 Full Pack

Power Dissipation :

32W

Number of Elements :

1

Vgs (Max) :

±20V

Max Dual Supply Voltage :

800V

Height :

19.6mm

Drain to Source Breakdown Voltage :

800V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Factory Lead Time :

18 Weeks