IPA80R460CEXKSA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

33A

Current - Continuous Drain (Id) @ 25°C :

10.8A Ta

Published :

2006

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-40°C~150°C TJ

Surface Mount :

No

JEDEC-95 Code :

TO-220AB

Avalanche Energy Rating (Eas) :

470 mJ

Terminal Position :

Single

Terminal Finish :

Tin (Sn)

Power Dissipation-Max :

34W Tc

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

460m Ω @ 7.1A, 10V

Package / Case :

TO-220-3 Full Pack

Max Dual Supply Voltage :

800V

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Case Connection :

Isolated

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSFM-T3

Factory Lead Time :

18 Weeks

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

1600pF @ 100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

64nC @ 10V

Continuous Drain Current (ID) :

10.8A

ECCN Code :

EAR99

Halogen Free :

Halogen Free

Number of Terminations :

3

Vgs(th) (Max) @ Id :

3.9V @ 680μA

Drain-source On Resistance-Max :

0.46Ohm

Pbfree Code :

yes

Series :

CoolMOS™