IPA80R650CEXKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

33W Tc

Package / Case :

TO-220-3 Full Pack

Turn On Delay Time :

25 ns

Pbfree Code :

yes

DS Breakdown Voltage-Min :

800V

Rds On (Max) @ Id, Vgs :

650m Ω @ 5.1A, 10V

Mount :

Through Hole

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Continuous Drain Current (ID) :

4.5A

Turn-Off Delay Time :

72 ns

FET Type :

N-Channel

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 100V

Operating Mode :

ENHANCEMENT MODE

Rise Time :

15ns

Drain to Source Voltage (Vdss) :

800V

Published :

2015

Drain-source On Resistance-Max :

0.65Ohm

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

24A

Series :

CoolMOS™ CE

Gate to Source Voltage (Vgs) :

20V

Case Connection :

Isolated

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Operating Temperature :

-40°C~150°C TJ

Vgs(th) (Max) @ Id :

3.9V @ 470μA

Mounting Type :

Through Hole

Fall Time (Typ) :

10 ns

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

JEDEC-95 Code :

TO-220AB

Drain Current-Max (Abs) (ID) :

8A

Current - Continuous Drain (Id) @ 25°C :

4.5A Tc

Number of Elements :

1