IPA50R950CE

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

4.3A Tc

Operating Temperature :

-40°C~150°C TJ

Surface Mount :

No

FET Type :

N-Channel

Published :

2008

Configuration :

SINGLE WITH BUILT-IN DIODE

Reach Compliance Code :

Compliant

Gate Charge (Qg) (Max) @ Vgs :

10.5nC @ 10V

Package / Case :

TO-220-3 Full Pack

Input Capacitance (Ciss) (Max) @ Vds :

231pF @ 100V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

68 mJ

JESD-30 Code :

R-PSFM-T3

Terminal Position :

Single

Pin Count :

3

Power Dissipation-Max :

25.7W Tc

Mounting Type :

Through Hole

RoHS Status :

RoHS Compliant

Drive Voltage (Max Rds On,Min Rds On) :

13V

Vgs (Max) :

±20V

Number of Terminations :

3

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

12.8A

Packaging :

Tube

FET Feature :

Super Junction

Case Connection :

Isolated

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

950m Ω @ 1.2A, 13V

Series :

CoolMOS™

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Factory Lead Time :

6 Weeks

JEDEC-95 Code :

TO-220AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

500V

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Vgs(th) (Max) @ Id :

3.5V @ 100µA

Drain to Source Voltage (Vdss) :

500V

Drain-source On Resistance-Max :

0.95Ohm