IPA50R140CPXK
- Mfr.Part #
- IPA50R140CPXK
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- N-CHANNEL POWER MOSFET
- Stock
- 16,333
- In Stock :
- 16,333
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-609 Code :
- e3
- JESD-30 Code :
- R-PSFM-T3
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain-source On Resistance-Max :
- 0.14Ohm
- Operating Mode :
- ENHANCEMENT MODE
- Published :
- 2008
- Pulsed Drain Current-Max (IDM) :
- 56A
- JEDEC-95 Code :
- TO-220AB
- Power Dissipation-Max :
- 34W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 23A Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Voltage (Vdss) :
- 500V
- Avalanche Energy Rating (Eas) :
- 616 mJ
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Qualification Status :
- Not Qualified
- Operating Temperature :
- -55°C~150°C TJ
- Vgs (Max) :
- ±20V
- Package / Case :
- TO-220-3 Full Pack
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Case Connection :
- Isolated
- FET Type :
- N-Channel
- Surface Mount :
- No
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Input Capacitance (Ciss) (Max) @ Vds :
- 2540pF @ 100V
- Drain Current-Max (Abs) (ID) :
- 23A
- Gate Charge (Qg) (Max) @ Vgs :
- 64nC @ 10V
- ECCN Code :
- EAR99
- Series :
- CoolMOS™
- Packaging :
- Tube
- Rds On (Max) @ Id, Vgs :
- 140m Ω @ 14A, 10V
- Terminal Position :
- Single
- Mounting Type :
- Through Hole
- DS Breakdown Voltage-Min :
- 500V
- Terminal Finish :
- Tin (Sn)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs(th) (Max) @ Id :
- 3.5V @ 930μA
- Datasheets
- IPA50R140CPXK

N-Channel Tube 140m Ω @ 14A, 10V ±20V 2540pF @ 100V 64nC @ 10V 500V TO-220-3 Full Pack
IPA50R140CPXKSA1 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 616 mJ.The maximum input capacitance of this device is 2540pF @ 100V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 23A.There is no pulsed drain current maximum for this device based on its rated peak drain current 56A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 500V.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IPA50R140CPXKSA1 Features
the avalanche energy rating (Eas) is 616 mJ
based on its rated peak drain current 56A.
a 500V drain to source voltage (Vdss)
IPA50R140CPXKSA1 Applications
There are a lot of Infineon Technologies
IPA50R140CPXKSA1 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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