IPA50R299CP
- Mfr.Part #
- IPA50R299CP
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- N-CHANNEL POWER MOSFET
- Stock
- 47,651
- In Stock :
- 47,651
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Gate Charge (Qg) (Max) @ Vgs :
- 31nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1190pF @ 100V
- Continuous Drain Current (ID) :
- 12A
- Power Dissipation-Max :
- 104W Tc
- Terminal Finish :
- Tin (Sn)
- ECCN Code :
- EAR99
- Factory Lead Time :
- 12 Weeks
- Qualification Status :
- Not Qualified
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Max Dual Supply Voltage :
- 500V
- Gate to Source Voltage (Vgs) :
- 20V
- Published :
- 2008
- Mounting Type :
- Through Hole
- Drain to Source Voltage (Vdss) :
- 550V
- RoHS Status :
- RoHS Compliant
- Halogen Free :
- Halogen Free
- Power Dissipation :
- 104W
- JEDEC-95 Code :
- TO-220AB
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-220-3 Full Pack
- Turn On Delay Time :
- 35 ns
- Mount :
- Through Hole
- FET Type :
- N-Channel
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Rds On (Max) @ Id, Vgs :
- 299m Ω @ 6.6A, 10V
- Operating Mode :
- ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM) :
- 26A
- Number of Pins :
- 3
- Rise Time :
- 14ns
- Drain-source On Resistance-Max :
- 0.299Ohm
- Turn-Off Delay Time :
- 80 ns
- Fall Time (Typ) :
- 12 ns
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- Terminal Position :
- Single
- Avalanche Energy Rating (Eas) :
- 289 mJ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 3.5V @ 440µA
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Case Connection :
- Isolated
- Vgs (Max) :
- ±20V
- Series :
- CoolMOS™
- Number of Terminations :
- 3
- Datasheets
- IPA50R299CP

N-Channel Tube 299m Ω @ 6.6A, 10V ±20V 1190pF @ 100V 31nC @ 10V 550V TO-220-3 Full Pack
IPA50R299CPXKSA1 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 289 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1190pF @ 100V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 12A.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 80 ns.Peak drain current for this device is 26A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 35 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.This device supports dual supply voltages maximally powered by 500V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 550V.Using drive voltage (10V) reduces this device's overall power consumption.
IPA50R299CPXKSA1 Features
the avalanche energy rating (Eas) is 289 mJ
a continuous drain current (ID) of 12A
the turn-off delay time is 80 ns
based on its rated peak drain current 26A.
a 550V drain to source voltage (Vdss)
IPA50R299CPXKSA1 Applications
There are a lot of Infineon Technologies
IPA50R299CPXKSA1 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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