IPA50R800CE

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

15.5A

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Terminal Position :

Single

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

800m Ω @ 1.5A, 13V

Number of Terminations :

3

Reach Compliance Code :

Compliant

Operating Temperature :

-40°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Through Hole

Published :

2008

ECCN Code :

EAR99

JEDEC-95 Code :

TO-220AB

Input Capacitance (Ciss) (Max) @ Vds :

280pF @ 100V

RoHS Status :

RoHS Compliant

JESD-30 Code :

R-PSFM-T3

Vgs(th) (Max) @ Id :

3.5V @ 130μA

Avalanche Energy Rating (Eas) :

83 mJ

FET Feature :

Super Junction

Power Dissipation-Max :

26.4W Tc

Surface Mount :

No

Package / Case :

TO-220-3 Full Pack

Gate Charge (Qg) (Max) @ Vgs :

12.4nC @ 10V

Pbfree Code :

yes

Vgs (Max) :

±20V

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

13V

Case Connection :

Isolated

Number of Elements :

1

Drain to Source Voltage (Vdss) :

500V

Pin Count :

3

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.8Ohm

DS Breakdown Voltage-Min :

500V

Factory Lead Time :

6 Weeks

Series :

CoolMOS™

Operating Mode :

ENHANCEMENT MODE