IPA50R650CEXKSA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

6.1A

Drain-source On Resistance-Max :

0.65Ohm

Fall Time (Typ) :

13 ns

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mount :

Through Hole

Series :

CoolMOS™ CE

Terminal Position :

Single

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

650m Ω @ 1.8A, 13V

Packaging :

Tube

Lead Free :

Lead Free

Package / Case :

TO-220-3 Full Pack

Continuous Drain Current (ID) :

4.6A

Turn On Delay Time :

6 ns

Factory Lead Time :

6 Weeks

FET Type :

N-Channel

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

342pF @ 100V

Number of Pins :

3

JESD-609 Code :

e3

Terminal Finish :

Tin (Sn)

Pulsed Drain Current-Max (IDM) :

19A

Case Connection :

Isolated

Max Dual Supply Voltage :

500V

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

13V

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

102 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Turn-Off Delay Time :

27 ns

Current - Continuous Drain (Id) @ 25°C :

4.6A Tc

Power Dissipation-Max :

27.2W Tc

Rise Time :

5ns

Pbfree Code :

yes

Halogen Free :

Halogen Free

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

3.5V @ 150μA

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-40°C~150°C TJ

JEDEC-95 Code :

TO-220AB

RoHS Status :

RoHS Compliant

Published :

2008