IPA50R650CE

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

27.2W Tc

Drain Current-Max (Abs) (ID) :

6.1A

Drive Voltage (Max Rds On,Min Rds On) :

13V

RoHS Status :

RoHS Compliant

Avalanche Energy Rating (Eas) :

102 mJ

FET Type :

N-Channel

DS Breakdown Voltage-Min :

500V

Package / Case :

TO-220-3 Full Pack

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

650m Ω @ 1.8A, 13V

Reach Compliance Code :

Compliant

JEDEC-95 Code :

TO-220AB

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Series :

CoolMOS™

Case Connection :

Isolated

Vgs (Max) :

±20V

Mounting Type :

Through Hole

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

342pF @ 100V

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

3.5V @ 150μA

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

FET Feature :

Super Junction

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

19A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

6.1A Tc

Published :

2013

Surface Mount :

No

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSFM-T3

Number of Elements :

1

Pin Count :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-40°C~150°C TJ

Drain to Source Voltage (Vdss) :

500V

Drain-source On Resistance-Max :

0.65Ohm