IPA50R500CE

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-220-3 Full Pack

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

3.5V @ 200µA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Through Hole

RoHS Status :

RoHS Compliant

Operating Temperature :

-40°C~150°C TJ

Reach Compliance Code :

Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Pbfree Code :

yes

FET Feature :

Super Junction

Packaging :

Tube

Surface Mount :

No

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

13V

DS Breakdown Voltage-Min :

500V

Drain-source On Resistance-Max :

0.5Ohm

Rds On (Max) @ Id, Vgs :

500m Ω @ 2.3A, 13V

Avalanche Energy Rating (Eas) :

129 mJ

Current - Continuous Drain (Id) @ 25°C :

7.6A Tc

Gate Charge (Qg) (Max) @ Vgs :

18.7nC @ 10V

Power Dissipation-Max :

28W Tc

Input Capacitance (Ciss) (Max) @ Vds :

433pF @ 100V

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

500V

Pin Count :

3

Number of Terminations :

3

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

24A

Published :

2008

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Single

Transistor Element Material :

SILICON

Series :

CoolMOS™

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSFM-T3

JEDEC-95 Code :

TO-220AB