IMD1AT108
- Mfr.Part #
- IMD1AT108
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-74, SOT-457
- Datasheet
- Download
- Description
- TRANS NPN/PNP PREBIAS 0.3W SMT6
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Arrays, Pre-Biased
- Terminal Finish :
- TIN SILVER COPPER
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 100mA
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Frequency - Transition :
- 250MHz
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Published :
- 1998
- Polarity :
- NPN, PNP
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- HTS Code :
- 8541.21.00.75
- Additional Feature :
- Digital
- Max Output Current :
- 100mA
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e1
- Package / Case :
- SC-74, SOT-457
- Collector Emitter Voltage (VCEO) :
- 50V
- Pin Count :
- 6
- Mount :
- Surface Mount
- Current Rating :
- 100mA
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 500μA, 5mA
- Lead Free :
- Lead Free
- Terminal Form :
- Gull wing
- Resistor - Base (R1) :
- 22k Ω
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1mA 5V
- Collector Emitter Breakdown Voltage :
- 50V
- Transistor Application :
- SWITCHING
- Transistor Type :
- 1 NPN, 1 PNP - Pre-Biased (Dual)
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 6
- VCEsat-Max :
- 0.3 V
- Number of Elements :
- 2
- Number of Pins :
- 6
- hFE Min :
- 100
- Transition Frequency :
- 250MHz
- Max Operating Temperature :
- 150°C
- Operating Supply Voltage :
- 50V
- Max Power Dissipation :
- 300mW
- Element Configuration :
- Dual
- Datasheets
- IMD1AT108

IMD1AT108 datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from ROHM Semiconductor stock available at
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