IMD1AT108

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Polarity :

NPN, PNP

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

10

Pbfree Code :

yes

Frequency - Transition :

250MHz

Transition Frequency :

250MHz

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 5mA

Max Operating Temperature :

150°C

hFE Min :

100

Transistor Application :

SWITCHING

Published :

1998

Pin Count :

6

Terminal Finish :

TIN SILVER COPPER

Collector Emitter Voltage (VCEO) :

50V

Collector Emitter Breakdown Voltage :

50V

Resistor - Base (R1) :

22k Ω

Terminal Form :

Gull wing

VCEsat-Max :

0.3 V

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Mounting Type :

Surface Mount

Package / Case :

SC-74, SOT-457

JESD-609 Code :

e1

ECCN Code :

EAR99

Number of Elements :

2

Radiation Hardening :

No

Max Collector Current :

100mA

Number of Terminations :

6

Operating Supply Voltage :

50V

Max Power Dissipation :

300mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1mA 5V

Lead Free :

Lead Free

Additional Feature :

Digital

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

100mA

HTS Code :

8541.21.00.75

Element Configuration :

Dual

RoHS Status :

ROHS3 Compliant

Number of Pins :

6

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Max Output Current :

100mA