IMD10AMT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

JESD-609 Code :

e3

Min Operating Temperature :

-55°C

Max Operating Temperature :

150°C

Halogen Free :

Halogen Free

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Number of Pins :

6

Surface Mount :

yes

Collector Emitter Breakdown Voltage :

50V

Radiation Hardening :

No

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

HTS Code :

8541.21.00.95

hFE Min :

68

ECCN Code :

EAR99

Power Dissipation :

285mW

Pbfree Code :

yes

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Number of Terminations :

6

Max Collector Current :

500mA

Pin Count :

6

Number of Elements :

2

Continuous Collector Current :

500mA

Factory Lead Time :

2 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Resistor - Emitter Base (R2) :

10k Ω

Polarity :

NPN, PNP

Collector Emitter Voltage (VCEO) :

50V

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1mA 5V / 68 @ 100mA 5V

Lead Free :

Lead Free

Max Power Dissipation :

285mW

Vce Saturation (Max) @ Ib, Ic :

300mV @ 1mA, 10mA

Element Configuration :

Dual

Current - Collector Cutoff (Max) :

500nA

Terminal Form :

Gull wing

Published :

2012

Resistor - Base (R1) :

13k Ω, 130 Ω