HN4A51JTE85LF
- Mfr.Part #
- HN4A51JTE85LF
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- SC-74A, SOT-753
- Datasheet
- Download
- Description
- TRANS 2PNP 120V 0.1A SMV
- Stock
- 17,656
- In Stock :
- 17,656
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Arrays
- Operating Temperature :
- 150°C TJ
- Collector Emitter Breakdown Voltage :
- 120V
- Packaging :
- Cut Tape (CT)
- Factory Lead Time :
- 12 Weeks
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Base Voltage (VCBO) :
- -120V
- Mount :
- Surface Mount
- Max Collector Current :
- 100mA
- Max Power Dissipation :
- 300mW
- Gain Bandwidth Product :
- 100MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 6V
- Radiation Hardening :
- No
- Transistor Type :
- 2 PNP (Dual)
- Collector Emitter Saturation Voltage :
- -300mV
- Collector Emitter Voltage (VCEO) :
- 300mV
- Emitter Base Voltage (VEBO) :
- -5V
- Mounting Type :
- Surface Mount
- Package / Case :
- SC-74A, SOT-753
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 200
- Number of Pins :
- 5
- Max Breakdown Voltage :
- 120V
- Polarity :
- PNP
- Published :
- 2009
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 1mA, 10mA
- Power - Max :
- 300mW
- RoHS Status :
- RoHS Compliant
- Element Configuration :
- Dual
- Datasheets
- HN4A51JTE85LF

HN4A51JTE85LF datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from Toshiba Semiconductor and Storage stock available at
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