FQU1N80TU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

7.2nC @ 10V

Series :

QFET®

Vgs (Max) :

±30V

Contact Plating :

Tin

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Weight :

343.08mg

Element Configuration :

Single

Number of Terminations :

3

Turn On Delay Time :

10 ns

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Power Dissipation-Max :

2.5W Ta 45W Tc

Continuous Drain Current (ID) :

1A

Drain to Source Breakdown Voltage :

800V

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Mount :

Through Hole

Fall Time (Typ) :

25 ns

Gate to Source Voltage (Vgs) :

30V

Voltage - Rated DC :

800V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Factory Lead Time :

6 Weeks

FET Type :

N-Channel

Pbfree Code :

yes

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

1A Tc

Rds On (Max) @ Id, Vgs :

20 Ω @ 500mA, 10V

Rise Time :

25ns

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Avalanche Energy Rating (Eas) :

90 mJ

Number of Pins :

3

Pulsed Drain Current-Max (IDM) :

4A

Packaging :

Tube

Current Rating :

1A

Turn-Off Delay Time :

15 ns

Number of Elements :

1

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

195pF @ 25V

Vgs(th) (Max) @ Id :

5V @ 250μA

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

1A

Published :

2014

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

2.5W