FQU10N20TU

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

360m Ω @ 3.8A, 10V

Drain-source On Resistance-Max :

0.36ohm

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

2.5W Ta 51W Tc

Vgs(th) (Max) @ Id :

5V @ 250μA

Operating Mode :

ENHANCEMENT MODE

Series :

QFET®

Pbfree Code :

yes

Drain Current-Max (Abs) (ID) :

7.6A

Current - Continuous Drain (Id) @ 25°C :

7.6A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

670pF @ 25V

Reach Compliance Code :

Unknown

Vgs (Max) :

±30V

Surface Mount :

No

Qualification Status :

COMMERCIAL

Terminal Finish :

NOT SPECIFIED

Packaging :

Tube

Pin Count :

3

DS Breakdown Voltage-Min :

200V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Pulsed Drain Current-Max (IDM) :

30.4A

JESD-30 Code :

R-PSIP-T3

Avalanche Energy Rating (Eas) :

180 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

200V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED