FQU10N20LTU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

JESD-609 Code :

e3

Vgs (Max) :

±20V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Series :

QFET®

Number of Elements :

1

Peak Reflow Temperature (Cel) :

Not Applicable

Packaging :

Tube

FET Type :

N-Channel

Reach Compliance Code :

Unknown

Configuration :

SINGLE WITH BUILT-IN DIODE

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

830pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

7.6A Tc

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

180 mJ

Pin Count :

3

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

2.5W Ta 51W Tc

Vgs(th) (Max) @ Id :

2V @ 250μA

Surface Mount :

No

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Pulsed Drain Current-Max (IDM) :

30.4A

Drain Current-Max (Abs) (ID) :

7.6A

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

200V

JESD-30 Code :

R-PSIP-T3

Rds On (Max) @ Id, Vgs :

360m Ω @ 3.8A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

MATTE TIN

DS Breakdown Voltage-Min :

200V

Drain-source On Resistance-Max :

0.38Ohm

Qualification Status :

COMMERCIAL

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 5V