FQP5N80

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Package / Case :

TO-220-3

Power Dissipation-Max :

140W Tc

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

Not Applicable

Surface Mount :

No

Pulsed Drain Current-Max (IDM) :

19.2A

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

800V

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSFM-T3

Vgs(th) (Max) @ Id :

5V @ 250μA

JESD-609 Code :

e3

Number of Terminations :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

1.25pF @ 25V

Qualification Status :

COMMERCIAL

Avalanche Energy Rating (Eas) :

590 mJ

Drain to Source Voltage (Vdss) :

800V

Operating Temperature :

-55°C~150°C TJ

Reach Compliance Code :

Unknown

Terminal Finish :

MATTE TIN

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 10V

Vgs (Max) :

±30V

Pin Count :

3

JEDEC-95 Code :

TO-220AB

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

4.8A Tc

Transistor Application :

SWITCHING

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Pbfree Code :

yes

Drain Current-Max (Abs) (ID) :

4.8A

Series :

QFET®

Rds On (Max) @ Id, Vgs :

2.6 Ω @ 2.4A, 10V