FQP55N06

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

JEDEC-95 Code :

TO-220AB

Drain to Source Voltage (Vdss) :

60V

Operating Temperature :

-55°C~175°C TJ

Reach Compliance Code :

Unknown

Mounting Type :

Through Hole

Pbfree Code :

yes

Transistor Element Material :

SILICON

Number of Elements :

1

Package / Case :

TO-220-3

Terminal Position :

Single

Power Dissipation-Max :

133W Tc

Current - Continuous Drain (Id) @ 25°C :

55A Tc

Avalanche Energy Rating (Eas) :

545 mJ

Drain-source On Resistance-Max :

0.02Ohm

DS Breakdown Voltage-Min :

60V

Surface Mount :

No

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 250µA

Pin Count :

3

Qualification Status :

COMMERCIAL

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

46nC @ 10V

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tube

Pulsed Drain Current-Max (IDM) :

220A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Finish :

Tin

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSFM-T3

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

1.69pF @ 25V

Vgs (Max) :

±25V

Drain Current-Max (Abs) (ID) :

55A

Series :

QFET®

Rds On (Max) @ Id, Vgs :

20m Ω @ 27.5A, 10V